Transistors:MOSFETs and TempFETs:MOSFETs:N-Ch:Enhancement Archives - Page 4 of 17

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Maximum Operating Temp (øC):	175õ
@V(DS) (V) (Test Condition):	48
td(on) Max (s) On time delay:	10nÂ
@V(GS) (V) (Test Condition):	20
@Temp (øC) (Test Condition):	150õ
@V(DS) (V) (Test Condition):	25
Military/High-Rel:	N
t(f) Max. (s) Fall time.:	19nÂ
Thermal Resistance Junc-Case:	3.5
Thermal Resistance Junc-Amb.:	80
V(BR)DSS (V):	60
Absolute Max. Power Diss. (W):	40
g(fs) Min. (S) Trans. conduct.:	2.4
V(BR)GSS (V):	20
r(DS)on Max. (Ohms):	200m
Minimum Operating Temp (øC):	-55õ
C(iss) Max. (F):	300p
V(GS)th Max. (V):	4.0
@V(GS) (V) (Test Condition):	10
@Freq. (Hz) (Test Condition):	1.0M
V(GS)th (V) (Min):	2.0
I(D) Max. (A):	10
Package Style:	TO-220AB
Description:	È
@I(D) (A) (Test Condition):	250u
I(DSS) Max. (A):	250u
Mounting Style:	T
t(d)off Max. (s) Off time:	13nÂ
I(GSS) Max. (A):	100n
@I(D) (A) (Test Condition):	6.0
t(r) Max. (s) Rise time:	50nÂ
I(DM) Max. (A) Pulsed I(D):	7.2
@I(D) (A) (Test Condition):	6.0
@Temp (øC):	100
IDM Max (@25øC Amb):	40
@V(DS) (V) (Test Condition):	50

Military/High-Rel:	N
V(BR)DSS (V):	150
V(BR)GSS (V):	20
I(D) Max. (A):	8.0#
I(DM) Max. (A) Pulsed I(D):	5.0#
@Temp (øC):	100
IDM Max (@25øC Amb):	32#
Absolute Max. Power Diss. (W):	75#
Minimum Operating Temp (øC):	-55õ
Maximum Operating Temp (øC):	150õ
Thermal Resistance Junc-Case:	1.67
Thermal Resistance Junc-Amb.:	80
V(GS)th Max. (V):	4
V(GS)th (V) (Min):	2
@I(D) (A) (Test Condition):	250u
I(DSS) Max. (A):	250u
@V(DS) (V) (Test Condition):	150
@Temp (øC) (Test Condition):	25
I(GSS) Max. (A):	500n
@V(GS) (V) (Test Condition):	20
r(DS)on Max. (Ohms):	600m
@V(GS) (V) (Test Condition):	10
@I(D) (A) (Test Condition):	5.0
g(fs) Min. (S) Trans. conduct.:	3.0
g(fs) Max; (S) Trans. conduct;:	4.8Â
@I(D) (A) (Test Condition):	5.0
C(iss) Max. (F):	600pÂ
@V(DS) (V) (Test Condition):	25
@Freq. (Hz) (Test Condition):	1M
td(on) Max (s) On time delay:	30n
t(r) Max. (s) Rise time:	50n
t(d)off Max. (s) Off time:	50n
t(f) Max. (s) Fall time.:	40n
Package Style:	TO-220AB
Mounting Style:	T
f(ab)	¦

Military/High-Rel:	N
V(BR)DSS (V):	500
V(BR)GSS (V):	20
I(D) Max. (A):	4.5#
I(DM) Max. (A) Pulsed I(D):	3.0
@Temp (øC):	100#
IDM Max (@25øC Amb):	18#
Absolute Max. Power Diss. (W):	75#
Minimum Operating Temp (øC):	-55#
Maximum Operating Temp (øC):	150#
Thermal Resistance Junc-Case:	1.67
Thermal Resistance Junc-Amb.:	80
V(GS)th Max. (V):	4
V(GS)th (V) (Min):	2
@I(D) (A) (Test Condition):	250u
I(DSS) Max. (A):	250u
@V(DS) (V) (Test Condition):	500
@Temp (øC) (Test Condition):	25
I(GSS) Max. (A):	500n
@V(GS) (V) (Test Condition):	20
r(DS)on Max. (Ohms):	1.5
@V(GS) (V) (Test Condition):	10
@I(D) (A) (Test Condition):	2.5
g(fs) Min. (S) Trans. conduct.:	2.7
g(fs) Max; (S) Trans. conduct;:	4.2Â
@V(DS) (V) (Test Condition):	50
@I(D) (A) (Test Condition):	2.5
C(iss) Max. (F):	600pÂ
@V(DS) (V) (Test Condition):	25
@Freq. (Hz) (Test Condition):	1M
td(on) Max (s) On time delay:	17n
t(r) Max. (s) Rise time:	23n
t(d)off Max. (s) Off time:	53n
t(f) Max. (s) Fall time.:	23n
Package Style:	TO-220AB
Mounting Style:	T
+/- (Plus or Minus)	ñ

g(fs) Min. (S) Trans. conduct.:	2.5¼
@I(D) (A) (Test Condition):	4.0
Mounting Style:	T
I(D) Max. (A):	7.0
Package Style:	TO-218var
Military/High-Rel:	N
r(DS)on Max. (Ohms):	1.5ò
g(fs) Max; (S) Trans. conduct;:	4.0Â
t(r) Max. (s) Rise time:	230nÂ
C(iss) Max. (F):	1.83nÂ
@V(DS) (V) (Test Condition):	10
t(f) Max. (s) Fall time.:	220nÂ
I(GSS) Max. (A):	10u
I(GSS) Max. (A):	ƒ
Absolute Max. Power Diss. (W):	100‚
V(BR)GSS (V):	20
V(BR)DSS (V):	800
Maximum Operating Temp (øC):	150õ

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