| Military/High-Rel: | N |
| V(BR)DSS (V): | 60 |
| V(BR)GSS (V): | 20 |
| I(D) Max. (A): | 60 |
| Absolute Max. Power Diss. (W): | 250 |
| Maximum Operating Temp (øC): | 150õ |
| I(GSS) Max. (A): | 100n |
| r(DS)on Max. (Ohms): | 28m |
| g(fs) Min. (S) Trans. conduct.: | 10 |
| @V(DS) (V) (Test Condition): | 15 |
| @I(D) (A) (Test Condition): | 30 |
| C(iss) Max. (F): | 5.0n |
| t(r) Max. (s) Rise time: | 350n |
| t(f) Max. (s) Fall time.: | 400n |
| Package Style: | TO-204AE |
| Mounting Style: | T |
| Junction Temperature | Ô |
Price: $25.00
Quantity: 1
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Quantity: 1 -
Quantity: 90
t(f) Max. (s) Fall time.: 60n V(BR)DSS (V): 60 Absolute Max. Power Diss. (W): 125 g(fs) Min. (S) Trans. conduct.: 12 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 40mò C(iss) Max. (F): 1.8n I(D) Max. (A): 40 I(GSS) Max. (A): 100n t(r) Max. (s) Rise time: 40n @I(D) (A) (Test Condition): 20 @V(DS) (V) (Test Condition): 15 -
Quantity: 9
Maximum Operating Temp (øC): 150õ Military/High-Rel: N V(BR)DSS (V): 600 Absolute Max. Power Diss. (W): 150 g(fs) Min. (S) Trans. conduct.: 2 r(DS)on Max. (Ohms): 1.5 C(iss) Max. (F): 1.8n I(D) Max. (A): 6 Package Style: TO-3 Description: Ù Mounting Style: T I(GSS) Max. (A): 500n @I(D) (A) (Test Condition): 3 @V(DS) (V) (Test Condition): 15 -
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Quantity: 70g(fs) Min. (S) Trans. conduct.: 5.0 @I(D) (A) (Test Condition): 6.0 Mounting Style: T I(D) Max. (A): 12 Package Style: TO-251 Military/High-Rel: N r(DS)on Max. (Ohms): 180m t(r) Max. (s) Rise time: 95n C(iss) Max. (F): 400p @V(DS) (V) (Test Condition): 15 t(f) Max. (s) Fall time.: 50n I(GSS) Max. (A): 100n Absolute Max. Power Diss. (W): 40 V(BR)GSS (V): 15 V(BR)DSS (V): 60 Maximum Operating Temp (øC): 150õ -
Quantity: 20
Military/High-Rel: N V(BR)DSS (V): 50 V(BR)GSS (V): 20 I(D) Max. (A): 5.0 Absolute Max. Power Diss. (W): 20 Maximum Operating Temp (øC): 150õ I(GSS) Max. (A): 100n r(DS)on Max. (Ohms): 400m g(fs) Min. (S) Trans. conduct.: 1.0 @V(DS) (V) (Test Condition): 15 @I(D) (A) (Test Condition): 2.5 C(iss) Max. (F): 300p t(r) Max. (s) Rise time: 25n t(f) Max. (s) Fall time.: 50n Package Style: TO-252 Mounting Style: S Channel -
Quantity: 20
t(f) Max. (s) Fall time.: 180n V(BR)DSS (V): 500 Absolute Max. Power Diss. (W): 150 g(fs) Min. (S) Trans. conduct.: 5.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 400m C(iss) Max. (F): 3.0n I(D) Max. (A): 13 I(GSS) Max. (A): 500n t(r) Max. (s) Rise time: 180n @I(D) (A) (Test Condition): 7.0 @V(DS) (V) (Test Condition): 10 -
Quantity: 2
t(f) Max. (s) Fall time.: 180n V(BR)DSS (V): 400 g(fs) Min. (S) Trans. conduct.: 5.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 300m C(iss) Max. (F): 3.0n I(D) Max. (A): 15 I(GSS) Max. (A): 100n t(r) Max. (s) Rise time: 180n @I(D) (A) (Test Condition): 8.0 @V(DS) (V) (Test Condition): 10 -
Quantity: 51mth20n15 is on sale at our online store for 56.925. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
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Quantity: 295
Maximum Operating Temp (øC): 150õ Military/High-Rel: N t(f) Max. (s) Fall time.: 200n V(BR)DSS (V): 900 Absolute Max. Power Diss. (W): 150 g(fs) Min. (S) Trans. conduct.: 2.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 3.0 C(iss) Max. (F): 2.6n I(D) Max. (A): 6.0 Package Style: TO-218AC Description: Ë Mounting Style: T I(GSS) Max. (A): 100n t(r) Max. (s) Rise time: 200n @I(D) (A) (Test Condition): 3.0 @V(DS) (V) (Test Condition): 15 -
Out of stock
Quantity: 0
Maximum Operating Temp (øC): 150õ Military/High-Rel: N t(f) Max. (s) Fall time.: 120n V(BR)DSS (V): 500 Absolute Max. Power Diss. (W): 150 g(fs) Min. (S) Trans. conduct.: 2.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 800m C(iss) Max. (F): 1.8n I(D) Max. (A): 7.0 Package Style: TO-218AC Description: – Mounting Style: T I(GSS) Max. (A): 500n t(r) Max. (s) Rise time: 150n @I(D) (A) (Test Condition): 3.5 @V(DS) (V) (Test Condition): 10 -
Quantity: 2Military/High-Rel: N V(BR)DSS (V): 100 V(BR)GSS (V): 100Ê I(D) Max. (A): 12 Absolute Max. Power Diss. (W): 75 Maximum Operating Temp (øC): 150þ I(GSS) Max. (A): 500n r(DS)on Max. (Ohms): .25ò g(fs) Min. (S) Trans. conduct.: 3.0 @V(DS) (V) (Test Condition): 10 @I(D) (A) (Test Condition): 6.0 C(iss) Max. (F): 1.2n Package Style: TO-3 Mounting Style: T Write-pulse Width; Minimum ö -
Quantity: 24MTM15N50 is on sale at our online store for 75.00. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970. -
Quantity: 13
V(BR)DSS (V): 80 g(fs) Min. (S) Trans. conduct.: 6.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 150m C(iss) Max. (F): 1.2n I(D) Max. (A): 20 I(GSS) Max. (A): 100n t(r) Max. (s) Rise time: 450n @I(D) (A) (Test Condition): 10 @V(DS) (V) (Test Condition): 15 -
Quantity: 6580
@(VDS) (V) (Test Condition): 20 @V(DS) (V) (Test Condition): 60 td(on) Max (s) On time delay: 36n @V(GS) (V) (Test Condition): 20 @Temp (øC) (Test Condition): 25õ @V(DS) (V) (Test Condition): 25 t(f) Max. (s) Fall time.: 100n Thermal Resistance Junc-Case: 1.25 Thermal Resistance Junc-Amb.: 62.5 V(BR)DSS (V): 60 Absolute Max. Power Diss. (W): 100 g(fs) Min. (S) Trans. conduct.: 8.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 40m Minimum Operating Temp (øC): -55õ C(iss) Max. (F): 2.0n V(GS)th Max. (V): 4.0 @V(GS) (V) (Test Condition): 10 @Freq. (Hz) (Test Condition): 1.0M V(GS)th (V) (Min): 2.0 I(D) Max. (A): 36 @I(D) (A) (Test Condition): 250u I(DSS) Max. (A): 10u t(d)off Max. (s) Off time: 90n I(GSS) Max. (A): 100n @I(D) (A) (Test Condition): 18 t(r) Max. (s) Rise time: 200n I(DM) Max. (A) Pulsed I(D): 22 @I(D) (A) (Test Condition): 18 @Temp (øC): 100 IDM Max (@25øC Amb): 144 @Pulse Width (s) (Condition): 10u @V(DS) (V) (Test Condition): 8.0 -
Quantity: 9
@(VDS) (V) (Test Condition): 20 Maximum Operating Temp (øC): 150õ @V(DS) (V) (Test Condition): 50 td(on) Max (s) On time delay: 30n @V(GS) (V) (Test Condition): 20 @Temp (øC) (Test Condition): 125õ @V(DS) (V) (Test Condition): 25 Military/High-Rel: N t(f) Max. (s) Fall time.: 200n Thermal Resistance Junc-Case: 1.0 V(BR)DSS (V): 50 Absolute Max. Power Diss. (W): 125 g(fs) Min. (S) Trans. conduct.: 15 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 9.5m Minimum Operating Temp (øC): -55õ C(iss) Max. (F): 2.9n V(GS)th Max. (V): 4.0 @V(GS) (V) (Test Condition): 10 @Freq. (Hz) (Test Condition): 1.0M V(GS)th (V) (Min): 2.0 I(D) Max. (A): 75 Package Style: TO-263AB @I(D) (A) (Test Condition): 250u I(DSS) Max. (A): 100u Mounting Style: S t(d)off Max. (s) Off time: 140n I(GSS) Max. (A): 100n @I(D) (A) (Test Condition): 20 t(r) Max. (s) Rise time: 340n I(DM) Max. (A) Pulsed I(D): 65 @I(D) (A) (Test Condition): 20 @Temp (øC): 100 IDM Max (@25øC Amb): 225 @Pulse Width (s) (Condition): 10u @V(DS) (V) (Test Condition): 10
