Price: $9.55
Quantity: 300
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Out of stockQuantity: 0EM636327Q-8 is on sale at our online store for 9.867. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
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Quantity: 1Military/High-Rel:NV(BR)CEO (V):45V(BR)CBO (V):60I(C) Max. (A):800mAbsolute Max. Power Diss. (W):225mMaximum Operating Temp (øC):150õI(CBO) Max. (A):20n×@V(CBO) (V) (Test Condition):45V(CE)sat Max. (V):700m@I(C) (A) (Test Condition):500mh(FE) Min. Current gain.:160h(FE) Max. Current gain.:400@I(C) (A) (Test Condition):100m@V(CE) (V) (Test Condition):1.0f(T) Min. (Hz) Transition Freq:100MC(obo) (Max) (F):6.0pPackage Style:SOT-23Mounting Style:S™
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Quantity: 8Military/High-Rel:NV(BR)CEO (V):180V(BR)CBO (V):180I(C) Max. (A):500mAbsolute Max. Power Diss. (W):400mMaximum Operating Temp (øC):175õI(CBO) Max. (A):50nØh(FE) Min. Current gain.:50@I(C) (A) (Test Condition):10m@V(CE) (V) (Test Condition):10f(T) Min. (Hz) Transition Freq:50MPackage Style:TO-206AAMounting Style:TPower Gain; in dB¹
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Out of stockQuantity: 0Military/High-Rel:NV(BR)CEO (V):30V(BR)CBO (V):30I(C) Max. (A):100mAbsolute Max. Power Diss. (W):360mMaximum Operating Temp (øC):175õI(CBO) Max. (A):15n×@I(C) (A) (Test Condition):10m@V(CE) (V) (Test Condition):1.0f(T) Min. (Hz) Transition Freq:400MPackage Style:TO-206AAMounting Style:TMany Values Availableì
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Out of stockQuantity: 028c64a-15/l is on sale at our online store for 10.0938. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
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Out of stockQuantity: 0Military/High-Rel:NV(BR)CEO (V):60V(BR)CBO (V):60I(C) Max. (A):10Absolute Max. Power Diss. (W):90Maximum Operating Temp (øC):150õI(CBO) Max. (A):200u@V(CBO) (V) (Test Condition):60h(FE) Min. Current gain.:1.0k@I(C) (A) (Test Condition):3.0@V(CE) (V) (Test Condition):3.0f(T) Min. (Hz) Transition Freq:10M@I(C) (A) (Test Condition):3.0@V(CE) (V) (Test Condition):3.0V(CE)sat Max. (V):2.5@I(C) (A) (Test Condition):8.0@I(B) (A) (Test Condition):80mt(on) Max. (s) On time.:2.5ut(off) Max. (s) Off time:10uSemiconductor Material:SiliconPackage Style:TO-220ABMounting Style:TNot at Breakdown VoltageëDescription:R1 = 8.0k; R2 = 100 ohm typ. C-E Diode.