IRFR110
| Internal ID | 85136
|
| Quantity in Stock: | 2625
|
| Manufacturer: | HARRIS
|
| Description: | 4.7A - 100V - 0.540 Ohm - N-Channel Power MOSFETs DPAK HEXFET
|
| Category: |
Price Per Quantity
| Military/High-Rel: | N |
| V(BR)DSS (V): | 100 |
| I(D) Max. (A): | 4.3 |
| I(DM) Max. (A) Pulsed I(D): | 2.7 |
| @Temp (øC): | 100# |
| IDM Max (@25øC Amb): | 17 |
| Absolute Max. Power Diss. (W): | 25 |
| Minimum Operating Temp (øC): | -55õ |
| Maximum Operating Temp (øC): | 150õ |
| Thermal Resistance Junc-Case: | 5.0 |
| Thermal Resistance Junc-Amb.: | 110 |
| V(GS)th Max. (V): | 4.0 |
| V(GS)th (V) (Min): | 2.0 |
| @I(D) (A) (Test Condition): | 250u |
| I(DSS) Max. (A): | 250u |
| @V(DS) (V) (Test Condition): | 80 |
| @Temp (øC) (Test Condition): | 125 |
| I(GSS) Max. (A): | 100n |
| @V(GS) (V) (Test Condition): | 20 |
| r(DS)on Max. (Ohms): | 540m |
| @V(GS) (V) (Test Condition): | 10 |
| @I(D) (A) (Test Condition): | 2.6 |
| g(fs) Min. (S) Trans. conduct.: | 1.6 |
| @V(DS) (V) (Test Condition): | 50 |
| @I(D) (A) (Test Condition): | 2.6 |
| C(iss) Max. (F): | 180p |
| @V(DS) (V) (Test Condition): | 25 |
| @Freq. (Hz) (Test Condition): | 1M |
| td(on) Max (s) On time delay: | 6.9n |
| t(r) Max. (s) Rise time: | 16n |
| t(d)off Max. (s) Off time: | 15n |
| t(f) Max. (s) Fall time.: | 9.4n |
| Package Style: | TO-252AA |
| Mounting Style: | S |
| Not at Breakdown Voltage | É |
