IRFM450

irfm450
Internal ID
85108
Quantity in Stock:
Manufacturer:
IR
Description:
500V Vdss N-Channel FET (field Effect Transistor) TRANS.
Category:

Price Per Quantity

    Military/High-Rel:N
    V(BR)DSS (V):500
    V(BR)GSS (V):20
    I(D) Max. (A):12
    I(DM) Max. (A) Pulsed I(D):8.0
    @Temp (øC):100#
    IDM Max (@25øC Amb):48
    Absolute Max. Power Diss. (W):150#
    Minimum Operating Temp (øC):-55
    Maximum Operating Temp (øC):150
    Thermal Resistance Junc-Case:.83
    Thermal Resistance Junc-Amb.:48
    V(GS)th Max. (V):4.0
    V(GS)th (V) (Min):2.0
    @(VDS) (V) (Test Condition):20
    @I(D) (A) (Test Condition):250u
    I(DSS) Max. (A):25u
    @V(DS) (V) (Test Condition):400
    @Temp (øC) (Test Condition):25#
    I(GSS) Max. (A):100n
    @V(GS) (V) (Test Condition):20
    r(DS)on Max. (Ohms):515m
    @V(GS) (V) (Test Condition):10
    @I(D) (A) (Test Condition):12
    g(fs) Min. (S) Trans. conduct.:6.5
    @V(DS) (V) (Test Condition):15
    @I(D) (A) (Test Condition):8.0
    C(iss) Max. (F):2.7nÂ
    @V(DS) (V) (Test Condition):25
    @V(GS) (V) (Test Condition):0.0
    @Freq. (Hz) (Test Condition):1.0M
    td(on) Max (s) On time delay:35n
    t(r) Max. (s) Rise time:190n
    t(d)off Max. (s) Off time:170n
    t(f) Max. (s) Fall time.:130n
    Package Style:TO-254AA
    Mounting Style:T
    Junction Temperatureò