IRF840
| Internal ID | 85029
|
| Quantity in Stock: | 252
|
| Manufacturer: | IR
|
| Description: | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
| Category: |
Price Per Quantity
| Military/High-Rel: | N |
| V(BR)DSS (V): | 500 |
| V(BR)GSS (V): | 20 |
| I(D) Max. (A): | 8.0# |
| I(DM) Max. (A) Pulsed I(D): | 5.1 |
| @Temp (øC): | 100# |
| IDM Max (@25øC Amb): | 32# |
| Absolute Max. Power Diss. (W): | 125# |
| Minimum Operating Temp (øC): | -55# |
| Maximum Operating Temp (øC): | 150# |
| Thermal Resistance Junc-Case: | 1 |
| Thermal Resistance Junc-Amb.: | 80 |
| V(GS)th Max. (V): | 4 |
| V(GS)th (V) (Min): | 2 |
| @I(D) (A) (Test Condition): | 250u |
| I(DSS) Max. (A): | 250u |
| @V(DS) (V) (Test Condition): | 500 |
| @Temp (øC) (Test Condition): | 25 |
| I(GSS) Max. (A): | 500n |
| @V(GS) (V) (Test Condition): | 20 |
| r(DS)on Max. (Ohms): | 850m |
| @V(GS) (V) (Test Condition): | 10 |
| @I(D) (A) (Test Condition): | 4.4 |
| g(fs) Min. (S) Trans. conduct.: | 4.9 |
| g(fs) Max; (S) Trans. conduct;: | 6Â |
| @I(D) (A) (Test Condition): | 4.4 |
| C(iss) Max. (F): | 1.5n |
| @V(DS) (V) (Test Condition): | 25 |
| @Freq. (Hz) (Test Condition): | 1M |
| td(on) Max (s) On time delay: | 21n |
| t(r) Max. (s) Rise time: | 35n |
| t(d)off Max. (s) Off time: | 74n |
| t(f) Max. (s) Fall time.: | 30n |
| Package Style: | TO-220AB |
| Mounting Style: | T |
| f(ab) | ¦ |
