IRF712
Internal ID | 84996
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Quantity in Stock: | 115
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Manufacturer: | IR
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Description: | N-Channel Power MOSFETs - 2.25A - 350-400V TRANSISTOR
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Category: |
Price Per Quantity
Military/High-Rel: | N |
V(BR)DSS (V): | 400 |
V(BR)GSS (V): | 20 |
I(D) Max. (A): | 1.7# |
I(DM) Max. (A) Pulsed I(D): | 1.1# |
@Temp (øC): | 100 |
IDM Max (@25øC Amb): | 4.3# |
Absolute Max. Power Diss. (W): | 36# |
Minimum Operating Temp (øC): | -55õ |
Maximum Operating Temp (øC): | 150õ |
Thermal Resistance Junc-Case: | 3.5 |
Thermal Resistance Junc-Amb.: | 80 |
V(GS)th Max. (V): | 4 |
V(GS)th (V) (Min): | 2 |
@I(D) (A) (Test Condition): | 250u |
I(DSS) Max. (A): | 250u |
@V(DS) (V) (Test Condition): | 400 |
@Temp (øC) (Test Condition): | 25 |
I(GSS) Max. (A): | 500n |
@V(GS) (V) (Test Condition): | 20 |
r(DS)on Max. (Ohms): | 5.0ò |
@V(GS) (V) (Test Condition): | 10 |
@I(D) (A) (Test Condition): | 1.1 |
g(fs) Min. (S) Trans. conduct.: | 1.0 |
g(fs) Max; (S) Trans. conduct;: | 1.5Â |
@V(DS) (V) (Test Condition): | 50 |
@I(D) (A) (Test Condition): | 1.1 |
C(iss) Max. (F): | 135p |
@V(DS) (V) (Test Condition): | 25 |
@Freq. (Hz) (Test Condition): | 1M |
td(on) Max (s) On time delay: | 12n |
t(r) Max. (s) Rise time: | 15n |
t(d)off Max. (s) Off time: | 32n |
t(f) Max. (s) Fall time.: | 17n |
Package Style: | TO-220AB |
Mounting Style: | T |
IB | ‡ |