Part Number: IRF630

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Internal ID
84987
Quantity in Stock:
53
Manufacturer:
SILICONIX
Description:
N-channel Enhancement-mode Power Field-effect Transistor. Drain-sourge Voltage 200V. Continuous Drain Current(at Tc 25deg) 9.0A. RECTIFIER
Category:

Price Per Quantity

53 in stock

1 - 24 $13.69
25 - 99 $13.55
100 - 499 $13.41
500 - 999 $13.35
999 + $13.28
Military/High-Rel:N
V(BR)DSS (V):200
V(BR)GSS (V):20
I(D) Max. (A):9.0#
I(DM) Max. (A) Pulsed I(D):6.0
@Temp (øC):100
IDM Max (@25øC Amb):36#
Absolute Max. Power Diss. (W):75#
Minimum Operating Temp (øC):-55õ
Maximum Operating Temp (øC):150õ
Thermal Resistance Junc-Case:1.67
Thermal Resistance Junc-Amb.:80
V(GS)th Max. (V):4
V(GS)th (V) (Min):2
@I(D) (A) (Test Condition):250u
I(DSS) Max. (A):250u
@V(DS) (V) (Test Condition):200
@Temp (øC) (Test Condition):25
I(GSS) Max. (A):500n
@V(GS) (V) (Test Condition):20
r(DS)on Max. (Ohms):400m
@V(GS) (V) (Test Condition):10
@I(D) (A) (Test Condition):5
g(fs) Min. (S) Trans. conduct.:3.0
g(fs) Max; (S) Trans. conduct;:4.8Â
@I(D) (A) (Test Condition):5.0
C(iss) Max. (F):600pÂ
@V(DS) (V) (Test Condition):25
@Freq. (Hz) (Test Condition):1M
td(on) Max (s) On time delay:30n
t(r) Max. (s) Rise time:50n
t(d)off Max. (s) Off time:50n
t(f) Max. (s) Fall time.:40n
Package Style:TO-220AB
Mounting Style:T
Pulsed Measurementæ