Part Number: IRF330
| Internal ID | 84955
|
| Quantity in Stock: | 9
|
| Manufacturer: | MOTOROLA
|
| Description: | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. TRANS.
|
| Category: |
Price Per Quantity
| @I(D) (A) (Test Condition): | 5.5 |
| @Temp (øC) (Test Condition): | 25 |
| g(fs) Min. (S) Trans. conduct.: | 2.9 |
| @I(D) (A) (Test Condition): | 3.5 |
| @V(DS) (V) (Test Condition): | 25 |
| @Temp (øC): | 100 |
| Mounting Style: | T |
| I(D) Max. (A): | 5.5 |
| Package Style: | TO-204AA |
| Military/High-Rel: | N |
| I(DSS) Max. (A): | 25u |
| r(DS)on Max. (Ohms): | 1.22 |
| t(d)off Max. (s) Off time: | 80n |
| I(DM) Max. (A) Pulsed I(D): | 3.5 |
| V(GS)th (V) (Min): | 2.0 |
| @(VDS) (V) (Test Condition): | 20 |
| @I(D) (A) (Test Condition): | 250m |
| @Freq. (Hz) (Test Condition): | 1.0M |
| @V(DS) (V) (Test Condition): | 320 |
| t(r) Max. (s) Rise time: | 40n |
| C(iss) Max. (F): | 620p |
| @V(DS) (V) (Test Condition): | 15 |
| t(f) Max. (s) Fall time.: | 35n |
| V(GS)th Max. (V): | 4.0 |
| IDM Max (@25øC Amb): | 22 |
| @V(GS) (V) (Test Condition): | 20 |
| I(GSS) Max. (A): | 100n |
| I(GSS) Max. (A): | ¹ |
| Thermal Resistance Junc-Amb.: | 30 |
| Absolute Max. Power Diss. (W): | 75 |
| V(BR)GSS (V): | 20 |
| V(BR)DSS (V): | 400 |
| @V(GS) (V) (Test Condition): | 10 |
| @V(GS) (V) (Test Condition): | 0.0 |
| td(on) Max (s) On time delay: | 30n |
| Thermal Resistance Junc-Case: | 1.67 |
| Maximum Operating Temp (øC): | 150 |
| Minimum Operating Temp (øC): | -55 |
