Part Number: IRF320

Internal ID | 84953
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Quantity in Stock: | 1333
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Manufacturer: | HARRIS
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Description: | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A.
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Category: |
Price Per Quantity
Maximum Operating Temp (øC): | 150õ |
@V(DS) (V) (Test Condition): | 400 |
td(on) Max (s) On time delay: | 15n |
@V(GS) (V) (Test Condition): | 20 |
@Temp (øC) (Test Condition): | 25 |
@V(DS) (V) (Test Condition): | 25 |
t(f) Max. (s) Fall time.: | 20n |
Thermal Resistance Junc-Case: | 2.5 |
Thermal Resistance Junc-Amb.: | 30 |
V(BR)DSS (V): | 400 |
g(fs) Max; (S) Trans. conduct;: | 2.7Â |
g(fs) Min. (S) Trans. conduct.: | 1.8 |
V(BR)GSS (V): | 20 |
r(DS)on Max. (Ohms): | 1.8 |
Minimum Operating Temp (øC): | -55õ |
C(iss) Max. (F): | 450p |
V(GS)th Max. (V): | 4 |
@V(GS) (V) (Test Condition): | 10 |
@Freq. (Hz) (Test Condition): | 1M |
V(GS)th (V) (Min): | 2 |
I(D) Max. (A): | 3.3 |
@I(D) (A) (Test Condition): | 250u |
I(DSS) Max. (A): | 250u |
t(d)off Max. (s) Off time: | 45n |
I(GSS) Max. (A): | 100n |
@I(D) (A) (Test Condition): | 1.8 |
t(r) Max. (s) Rise time: | 20n |
I(DM) Max. (A) Pulsed I(D): | 2.1 |
@I(D) (A) (Test Condition): | 1.8 |
@Temp (øC): | 100 |
IDM Max (@25øC Amb): | 13 |
@V(DS) (V) (Test Condition): | 50 |