Part Number: 2N1008B
| Internal ID | 49441
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| Quantity in Stock: | |
| Manufacturer: | Mixed
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| Description: | |
| Category: |
Price Per Quantity
Military/High-Rel:NV(BR)CEO (V):60V(BR)CBO (V):60I(C) Max. (A):10Absolute Max. Power Diss. (W):90Maximum Operating Temp (øC):150õI(CBO) Max. (A):200u@V(CBO) (V) (Test Condition):60h(FE) Min. Current gain.:1.0k@I(C) (A) (Test Condition):3.0@V(CE) (V) (Test Condition):3.0f(T) Min. (Hz) Transition Freq:10M@I(C) (A) (Test Condition):3.0@V(CE) (V) (Test Condition):3.0V(CE)sat Max. (V):2.5@I(C) (A) (Test Condition):8.0@I(B) (A) (Test Condition):80mt(on) Max. (s) On time.:2.5ut(off) Max. (s) Off time:10uSemiconductor Material:SiliconPackage Style:TO-220ABMounting Style:TNot at Breakdown VoltageëDescription:R1 = 8.0k; R2 = 100 ohm typ. C-E Diode.
