Transistors:MOSFETs and TempFETs:MOSFETs:N-Ch:Enhancement Archives - Page 5 of 11

MTC75N06HD

$14.95

Quantity: 817

mtc75n06hd is on sale at our online store for 14.95. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.

@(VDS) (V) (Test Condition):	20
Maximum Operating Temp (øC):	150õ
@V(DS) (V) (Test Condition):	50
td(on) Max (s) On time delay:	30n
@V(GS) (V) (Test Condition):	20
@Temp (øC) (Test Condition):	125õ
@V(DS) (V) (Test Condition):	25
Military/High-Rel:	N
t(f) Max. (s) Fall time.:	200n
Thermal Resistance Junc-Case:	1.0
V(BR)DSS (V):	50
Absolute Max. Power Diss. (W):	125
g(fs) Min. (S) Trans. conduct.:	15
V(BR)GSS (V):	20
r(DS)on Max. (Ohms):	9.5m
Minimum Operating Temp (øC):	-55õ
C(iss) Max. (F):	2.9n
V(GS)th Max. (V):	4.0
@V(GS) (V) (Test Condition):	10
@Freq. (Hz) (Test Condition):	1.0M
V(GS)th (V) (Min):	2.0
I(D) Max. (A):	75
Package Style:	TO-263AB
@I(D) (A) (Test Condition):	250u
I(DSS) Max. (A):	100u
Mounting Style:	S
t(d)off Max. (s) Off time:	140n
I(GSS) Max. (A):	100n
@I(D) (A) (Test Condition):	20
t(r) Max. (s) Rise time:	340n
I(DM) Max. (A) Pulsed I(D):	65
@I(D) (A) (Test Condition):	20
@Temp (øC):	100
IDM Max (@25øC Amb):	225
@Pulse Width (s) (Condition):	10u
@V(DS) (V) (Test Condition):	10

@(VDS) (V) (Test Condition):	20
@V(DS) (V) (Test Condition):	60
td(on) Max (s) On time delay:	36n
@V(GS) (V) (Test Condition):	20
@Temp (øC) (Test Condition):	25õ
@V(DS) (V) (Test Condition):	25
t(f) Max. (s) Fall time.:	100n
Thermal Resistance Junc-Case:	1.25
Thermal Resistance Junc-Amb.:	62.5
V(BR)DSS (V):	60
Absolute Max. Power Diss. (W):	100
g(fs) Min. (S) Trans. conduct.:	8.0
V(BR)GSS (V):	20
r(DS)on Max. (Ohms):	40m
Minimum Operating Temp (øC):	-55õ
C(iss) Max. (F):	2.0n
V(GS)th Max. (V):	4.0
@V(GS) (V) (Test Condition):	10
@Freq. (Hz) (Test Condition):	1.0M
V(GS)th (V) (Min):	2.0
I(D) Max. (A):	36
@I(D) (A) (Test Condition):	250u
I(DSS) Max. (A):	10u
t(d)off Max. (s) Off time:	90n
I(GSS) Max. (A):	100n
@I(D) (A) (Test Condition):	18
t(r) Max. (s) Rise time:	200n
I(DM) Max. (A) Pulsed I(D):	22
@I(D) (A) (Test Condition):	18
@Temp (øC):	100
IDM Max (@25øC Amb):	144
@Pulse Width (s) (Condition):	10u
@V(DS) (V) (Test Condition):	8.0

g(fs) Min. (S) Trans. conduct.:	1.2
@I(D) (A) (Test Condition):	1
@V(DS) (V) (Test Condition):	12.5
Mounting Style:	T
I(D) Max. (A):	6
Package Style:	RFMOD
Military/High-Rel:	N
I(DSS) Max. (A):	5m
V(GS)th (V) (Min):	1.25
@(VDS) (V) (Test Condition):	10
@I(D) (A) (Test Condition):	10m
@Freq. (Hz) (Test Condition):	1M
@V(DS) (V) (Test Condition):	15
C(iss) Max. (F):	33pÂ
@V(DS) (V) (Test Condition):	10
V(GS)th Max. (V):	3.5
@V(GS) (V) (Test Condition):	20
I(GSS) Max. (A):	2u
I(GSS) Max. (A):	á
Absolute Max. Power Diss. (W):	50
V(BR)GSS (V):	20
V(BR)DSS (V):	36
Thermal Resistance Junc-Case:	3.5
Maximum Operating Temp (øC):	200õ

@(VDS) (V) (Test Condition):	10
@V(DS) (V) (Test Condition):	28
@V(GS) (V) (Test Condition):	20
@Temp (øC) (Test Condition):	25
@V(DS) (V) (Test Condition):	28
Thermal Resistance Junc-Case:	650m
V(BR)DSS (V):	65
g(fs) Max; (S) Trans. conduct;:	2.5Â
Absolute Max. Power Diss. (W):	270
g(fs) Min. (S) Trans. conduct.:	1.7
V(BR)GSS (V):	40
Minimum Operating Temp (øC):	-65
C(iss) Max. (F):	175pÂ
V(GS)th Max. (V):	6.0
@Freq. (Hz) (Test Condition):	1.0M
V(GS)th (V) (Min):	1.0
I(D) Max. (A):	13
@I(D) (A) (Test Condition):	100m
I(DSS) Max. (A):	10m
I(GSS) Max. (A):	1.0u
@I(D) (A) (Test Condition):	3.0
@V(DS) (V) (Test Condition):	10

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