Part Number: MTB36N06E

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Internal ID
98190
Quantity in Stock:
6580
Manufacturer:
NSC
Description:
N-Channel Enhancement MOSFET FET D2 PAK
Category:

Price Per Quantity

6580 in stock

1 - 24 $4.08
25 - 99 $4.03
100 - 499 $3.99
500 - 999 $3.97
999 + $3.95

































@(VDS) (V) (Test Condition):20
@V(DS) (V) (Test Condition):60
td(on) Max (s) On time delay:36n
@V(GS) (V) (Test Condition):20
@Temp (øC) (Test Condition):25õ
@V(DS) (V) (Test Condition):25
t(f) Max. (s) Fall time.:100n
Thermal Resistance Junc-Case:1.25
Thermal Resistance Junc-Amb.:62.5
V(BR)DSS (V):60
Absolute Max. Power Diss. (W):100
g(fs) Min. (S) Trans. conduct.:8.0
V(BR)GSS (V):20
r(DS)on Max. (Ohms):40m
Minimum Operating Temp (øC):-55õ
C(iss) Max. (F):2.0n
V(GS)th Max. (V):4.0
@V(GS) (V) (Test Condition):10
@Freq. (Hz) (Test Condition):1.0M
V(GS)th (V) (Min):2.0
I(D) Max. (A):36
@I(D) (A) (Test Condition):250u
I(DSS) Max. (A):10u
t(d)off Max. (s) Off time:90n
I(GSS) Max. (A):100n
@I(D) (A) (Test Condition):18
t(r) Max. (s) Rise time:200n
I(DM) Max. (A) Pulsed I(D):22
@I(D) (A) (Test Condition):18
@Temp (øC):100
IDM Max (@25øC Amb):144
@Pulse Width (s) (Condition):10u
@V(DS) (V) (Test Condition):8.0