IXFM20N60
| Internal ID | 85421
|
| Quantity in Stock: | |
| Manufacturer: | IXYS
|
| Description: | N-Channel Enhancement MOSFET TRANSISTOR
|
| Category: |
Price Per Quantity
| Military/High-Rel: | N |
| V(BR)DSS (V): | 600 |
| V(BR)GSS (V): | 20 |
| I(D) Max. (A): | 20# |
| IDM Max (@25øC Amb): | 80# |
| Absolute Max. Power Diss. (W): | 300# |
| Minimum Operating Temp (øC): | -55 |
| Maximum Operating Temp (øC): | 150õ |
| Thermal Resistance Junc-Case: | 420m |
| V(GS)th Max. (V): | 4.5 |
| V(GS)th (V) (Min): | 2.0 |
| @I(D) (A) (Test Condition): | 4m |
| I(DSS) Max. (A): | 250u |
| @V(DS) (V) (Test Condition): | 480 |
| @Temp (øC) (Test Condition): | 25õ |
| I(GSS) Max. (A): | 100n |
| @V(GS) (V) (Test Condition): | 20 |
| r(DS)on Max. (Ohms): | 350m |
| @V(GS) (V) (Test Condition): | 10 |
| @I(D) (A) (Test Condition): | 10 |
| g(fs) Min. (S) Trans. conduct.: | 11 |
| g(fs) Max; (S) Trans. conduct;: | 18Â |
| @V(DS) (V) (Test Condition): | 10 |
| @I(D) (A) (Test Condition): | 10 |
| C(iss) Max. (F): | 4.5n |
| @V(DS) (V) (Test Condition): | 25 |
| @Freq. (Hz) (Test Condition): | 1M |
| td(on) Max (s) On time delay: | 40n |
| t(r) Max. (s) Rise time: | 60n |
| t(d)off Max. (s) Off time: | 90n |
| t(f) Max. (s) Fall time.: | 60n |
| Package Style: | TO-204AE |
| Mounting Style: | T |
| Ccb | ¯ |
