Part Number: IRFIBE30G

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Internal ID
85096
Quantity in Stock:
66
Manufacturer:
IR
Description:
N-Channel Enhancement MOSFET TRANSISTOR
Category:

Price Per Quantity

66 in stock

1 - 24 $11.40
25 - 99 $11.29
100 - 499 $11.17
500 - 999 $11.12
999 + $11.06



































Maximum Operating Temp (øC):150õ
@V(DS) (V) (Test Condition):640
td(on) Max (s) On time delay:12nÂ
@V(GS) (V) (Test Condition):20
@Temp (øC) (Test Condition):125õ
@V(DS) (V) (Test Condition):25
Military/High-Rel:N
t(f) Max. (s) Fall time.:30nÂ
Thermal Resistance Junc-Case:3.6
Thermal Resistance Junc-Amb.:65
V(BR)DSS (V):800
Absolute Max. Power Diss. (W):35
g(fs) Min. (S) Trans. conduct.:1.7
r(DS)on Max. (Ohms):3.0
Minimum Operating Temp (øC):-55õ
C(iss) Max. (F):1.3nÂ
V(GS)th Max. (V):4.0
@V(GS) (V) (Test Condition):10
@Freq. (Hz) (Test Condition):1M
V(GS)th (V) (Min):2.0
I(D) Max. (A):2.1
Package Style:SOT-186
Description:ó
@I(D) (A) (Test Condition):250u
I(DSS) Max. (A):500u
Mounting Style:T
t(d)off Max. (s) Off time:82nÂ
I(GSS) Max. (A):100n
@I(D) (A) (Test Condition):1.3
t(r) Max. (s) Rise time:33nÂ
I(DM) Max. (A) Pulsed I(D):1.4
@I(D) (A) (Test Condition):1.3
@Temp (øC):100#
IDM Max (@25øC Amb):8.4
@V(DS) (V) (Test Condition):50