IRFD123
| Internal ID | 85069
|
| Quantity in Stock: | 88
|
| Manufacturer: | IR
|
| Description: | N-Channel Enhancement MOSFET IC
|
| Category: |
Price Per Quantity
| @V(DS) (V) (Test Condition): | 80 |
| td(on) Max (s) On time delay: | 40n |
| @V(GS) (V) (Test Condition): | 20 |
| @Temp (øC) (Test Condition): | 25 |
| @V(DS) (V) (Test Condition): | 25 |
| t(f) Max. (s) Fall time.: | 70n |
| Thermal Resistance Junc-Amb.: | 120 |
| V(BR)DSS (V): | 80 |
| g(fs) Max; (S) Trans. conduct;: | 1.0Â |
| Absolute Max. Power Diss. (W): | 1.0# |
| g(fs) Min. (S) Trans. conduct.: | 0.9 |
| V(BR)GSS (V): | 20 |
| r(DS)on Max. (Ohms): | 400m |
| Minimum Operating Temp (øC): | -55õ |
| C(iss) Max. (F): | 450p |
| V(GS)th Max. (V): | 4 |
| @V(GS) (V) (Test Condition): | 10 |
| @Freq. (Hz) (Test Condition): | 1M |
| V(GS)th (V) (Min): | 2 |
| I(D) Max. (A): | 1.1# |
| @I(D) (A) (Test Condition): | 250u |
| I(DSS) Max. (A): | 250u |
| t(d)off Max. (s) Off time: | 100n |
| I(GSS) Max. (A): | 500n |
| @I(D) (A) (Test Condition): | 600m |
| t(r) Max. (s) Rise time: | 70n |
| @I(D) (A) (Test Condition): | 600m |
| IDM Max (@25øC Amb): | 4.4# |
