Part Number: IRF710

Internal ID | 84995
|
Quantity in Stock: | 2385
|
Manufacturer: | HARRIS
|
Description: | 2.0A 400V 3.600 Ohm N-Channel Power MOSFET
|
Category: |
Price Per Quantity
Maximum Operating Temp (øC): | 150õ |
@V(DS) (V) (Test Condition): | 400 |
td(on) Max (s) On time delay: | 12n |
@V(GS) (V) (Test Condition): | 20 |
@Temp (øC) (Test Condition): | 25 |
@V(DS) (V) (Test Condition): | 25 |
Military/High-Rel: | N |
t(f) Max. (s) Fall time.: | 17n |
Thermal Resistance Junc-Case: | 3.5 |
Thermal Resistance Junc-Amb.: | 80 |
V(BR)DSS (V): | 400 |
g(fs) Max; (S) Trans. conduct;: | 1.5Â |
Absolute Max. Power Diss. (W): | 36# |
g(fs) Min. (S) Trans. conduct.: | 1.0 |
V(BR)GSS (V): | 20 |
r(DS)on Max. (Ohms): | 3.6 |
Minimum Operating Temp (øC): | -55õ |
C(iss) Max. (F): | 135p |
V(GS)th Max. (V): | 4 |
@V(GS) (V) (Test Condition): | 10 |
@Freq. (Hz) (Test Condition): | 1M |
V(GS)th (V) (Min): | 2 |
I(D) Max. (A): | 2.0# |
Package Style: | TO-220AB |
@I(D) (A) (Test Condition): | 250u |
I(DSS) Max. (A): | 250u |
Mounting Style: | T |
t(d)off Max. (s) Off time: | 32n |
I(GSS) Max. (A): | 500n |
@I(D) (A) (Test Condition): | 1.1 |
t(r) Max. (s) Rise time: | 15n |
I(DM) Max. (A) Pulsed I(D): | 1.2 |
@I(D) (A) (Test Condition): | 1.1 |
@Temp (øC): | 100 |
IDM Max (@25øC Amb): | 5# |
@V(DS) (V) (Test Condition): | 50 |