Part Number: 2N6756
| Internal ID | 52075
|
| Quantity in Stock: | 117
|
| Manufacturer: | SILICONIX
|
| Description: | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. TRANSISTOR
|
| Category: |
Price Per Quantity
| @(VDS) (V) (Test Condition): | 10 |
| Maximum Operating Temp (øC): | 150õ |
| @V(DS) (V) (Test Condition): | 60 |
| td(on) Max (s) On time delay: | 30n |
| @V(GS) (V) (Test Condition): | 20 |
| @Temp (øC) (Test Condition): | 25# |
| @V(DS) (V) (Test Condition): | 25 |
| Military/High-Rel: | N |
| t(f) Max. (s) Fall time.: | 45n |
| Thermal Resistance Junc-Case: | 1.7 |
| V(BR)DSS (V): | 100 |
| g(fs) Max; (S) Trans. conduct;: | 9.0 |
| Absolute Max. Power Diss. (W): | 75 |
| g(fs) Min. (S) Trans. conduct.: | 4.0 |
| V(BR)GSS (V): | 20 |
| r(DS)on Max. (Ohms): | 180m |
| Minimum Operating Temp (øC): | -55õ |
| C(iss) Max. (F): | 700p |
| V(GS)th Max. (V): | 2.0 |
| @V(GS) (V) (Test Condition): | 10 |
| @V(GS) (V) (Test Condition): | 0.0 |
| @Freq. (Hz) (Test Condition): | 1.0M |
| V(GS)th (V) (Min): | 4.0 |
| Package Style: | TO-3 |
| @I(D) (A) (Test Condition): | 1.0m |
| I(DSS) Max. (A): | 1.0m |
| Mounting Style: | T |
| t(d)off Max. (s) Off time: | 40n |
| I(GSS) Max. (A): | 100n |
| @I(D) (A) (Test Condition): | 10 |
| t(r) Max. (s) Rise time: | 75n |
| I(DM) Max. (A) Pulsed I(D): | 12 |
| @I(D) (A) (Test Condition): | 9.0 |
| @Temp (øC): | 90# |
| @V(DS) (V) (Test Condition): | 15 |
