Part Number: STH6N100

Internal ID | 112384
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Quantity in Stock: | |
Manufacturer: | ST
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Description: | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TRANSISTOR
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Category: |
Price Per Quantity
Maximum Operating Temp (øC): | 150õ |
@V(DS) (V) (Test Condition): | 1.0k |
td(on) Max (s) On time delay: | 90n |
@V(GS) (V) (Test Condition): | 20 |
@Temp (øC) (Test Condition): | 25# |
@V(DS) (V) (Test Condition): | 25 |
Military/High-Rel: | N |
t(f) Max. (s) Fall time.: | 65n |
Thermal Resistance Junc-Case: | 690m |
Thermal Resistance Junc-Amb.: | 30 |
V(BR)DSS (V): | 1.0k |
g(fs) Max; (S) Trans. conduct;: | 5.5Â |
Absolute Max. Power Diss. (W): | 180# |
g(fs) Min. (S) Trans. conduct.: | 4 |
V(BR)GSS (V): | 20 |
r(DS)on Max. (Ohms): | 2 |
C(iss) Max. (F): | 2.8n |
V(GS)th Max. (V): | 4 |
@V(GS) (V) (Test Condition): | 10 |
@Freq. (Hz) (Test Condition): | 1M |
V(GS)th (V) (Min): | 2 |
I(D) Max. (A): | 6# |
Package Style: | TO-218 |
Description: | † |
@I(D) (A) (Test Condition): | 250u |
I(DSS) Max. (A): | 250u |
Mounting Style: | T |
I(GSS) Max. (A): | 100n |
@I(D) (A) (Test Condition): | 3 |
t(r) Max. (s) Rise time: | 280n |
I(DM) Max. (A) Pulsed I(D): | 3.7 |
@I(D) (A) (Test Condition): | 3 |
@Temp (øC): | 100# |
IDM Max (@25øC Amb): | 24 |